Revista Colombiana de Física, Vol 44, No 2 (2012)

Tamaño de la letra:  Pequeña  Mediana  Grande

Structural and Optical Properties of GaPN Thin Films Grown by Magnetron Sputtering

Alvaro Orlando Pulzara Mora, M. Melendez Lira, M. López López

Resumen


GaPN thin films were deposited on Silicon (100) substrates in the range of 420-520 °C by r-f sputtering employing a nitrogen–argon atmosphere. Energy dispersive x- ray spectroscopy revealed the presence of Oxygen in the films, which presumably was incorporated from the background pressure in the deposition chamber or from the gases employed. X-ray diffraction measurements indicate a preferential orientation of the GaPN films along the [111] direction, and the formation of a GaxOy compound. Raman spectroscopy measurements showed the presence of N atoms in the films. Raman signals associated to gallium oxides and Ga(PO3)3 were also identified. The films presented peaks in the photoluminescence spectra at 15 K associated to GaPN and to a Ga oxide compound.

 


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ISSN: 0120-2650

 

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